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GATE-ECE-2011--->View question

## The channel resistance of an N-channel JFET shown in the figure below is 600 Ω -gate-ece-2011

##### when the full channel thickness (tch) of 10 mµ is available for conduction. The built-in voltage of the gate P+ N junction (Vbi) is -1 V. When the gate to sourcevoltage (VGS) is 0 V, the channel is depleted by 1 mµ on each side due to the builtin voltage and hence the thickness available for conduction is only 8 mThe channel resistance when VGS = -3 V is  (A) 360Ω (B) 917Ω (C) 1000Ω (D) 3000Ω

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The electrical resistance of an electrical conductor is a measure of the difficulty to pass an electric current through that conductor. The inverse quantity is electrical conductance, and is the ease with which an electric current passes. Electrical resistance shares some conceptual parallels with the notion of mechanical friction. The SI unit of electrical resistance is the ohm (Ω), while electrical conductance is measured in siemens (S).

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